Document Details

Document Type : Project 
Document Title :
Design and construction technology based on the way Brigman for the processing of single crystals from the melt and measuring the electrical properties and Hall coefficient of the crystals tested.
تصميم وبناء تقنية تعتمد على طريقة بريدجمان لتجهيز بلورات آحادية من المصهور وقياس الخواص الكهربائية ومعامل هول للبلورات المنماة .
 
Document Language : Arabic 
Abstract : In this project was designed and built a laboratory for development of single crystals take shape according to how Brigman, using a local potential. In this way crystals grow from a mixture of chemical elements used for the installation of the crystal is desired and the specific proportions and calculated. This design is characterized by high efficiency and low cost finance. Crystal that has been developed in our project, this is the second crystal thallium indium tellurium. Also been our experience of measurement to be used to measure the electrical properties of an experience by which Hall and was measured Hall coefficient and electrical conductivity in the range of direct temperature of 158 to 473 Kelvin. We have found that this type of crystals of a type semiconductor with a majority of the positive charges of any shipments that the most responsible for the transfer of power is a positive charge. Have been calculated Hall coefficient (109 x 2.3 cm / coulomb) and the concentration of shipments (109 x 2.81 cc) and also calculated the activation energy and electrical ionization energy and the crystal was established respectively 0.72 eV and 0.113 eV. 
Publishing Year : 1426 AH
2006 AD 
Sponsor Name : kau 
Sponsorship Year : 1426 AH
2006 AD 
Added Date : Wednesday, April 30, 2008 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
أحمد عبدالله الغامديalghamdi, ahmed abdullahInvestigatorDoctorate 

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