Document Details

Document Type : Project 
Document Title :
Study of resistance to the silicon with impurities gradually unscrewed using the equation for the effort.
دراسة المقاومية لمادة السيلكون ذات شوائب متعادلة باستخدام مفكوك تدريجي للجهد.
 
Document Language : Arabic 
Abstract : In this research the expense of material resistivity silicon with impurities of the type R at low temperature, using a voltage is derived. Φ0 {1 + a (1 / r + 1 / R)} Φ (r) = And comparing the results that we get the results that use a voltage that Achtgah (dongle) as well as proposed (Savensky) and access to these results, we use the base change constants to calculate the offset of the partial wave at the zero order, so we will use the approximation (born) to calculate the grade is zero for this offset , then we use these offsets to calculate the dispersion section, which in turn is used to calculate the time of "relaxation" and from the calculated resistivity silicon. Research found that the results obtained in full agreement with the results recorded by the resistance (dongle). 
Publishing Year : 1413 AH
1993 AD 
Sponsor Name : kau 
Sponsorship Year : 1413 AH
1993 AD 
Added Date : Wednesday, April 30, 2008 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
عويش حربي مباركmubarak, ouiash harbiInvestigatorDoctorate 

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